Characterization of Semi-Insulating Gallium Arsenide

摘要

The project was established 11-18-92 to continue for 12 months. Its purpose hasbeen electrical and optical characterization of samples from semi-insulating (SI) melt-grown crystals of gallium arsenide (GaAs). As a further definition of the project's purpose, the primary goal has been to assist NRL in assessing the properties of SI GaAs crystals grown at NRL, by the vertical zone melt (VZM) method. A second aspect of this characterization work has involved samples from SI GaAs crystals grown by various commercial vendors, including samples of pre-synthesized GaAs evaluated for its suitability as starting 'feedstock' for VZM growth. Measurements made at Western Washington University (WWU) under the terms of this project accord with a Statement of Work provided at the outset. These have included (a) low-field dc electrical transport data for SI GaAs samples, as functions of temperature; (b) near-infrared (NIR) transmittance/absorption spectra of polished slabs, with data concerning the well-known EL2 defect determined from NIR absorption strength and spectral form; (c) mid-IR data on absorption caused by carbon acceptors in SI GaAs.