Growth of In(1-x)Tl(x)Sb, a New Infrared Material, by Low-Pressure MetalorganicChemical Vapor Deposition. (Reannouncement with New Availability Information)

摘要

We report the growth of In(1-x)Tl(x)Sb, a new III-V alloy for long-wavelengthinfrared detector applications, by low-pressure metalorganic chemical vapor deposition. In(1-x)Tl(x)Sb with good surface morphology was obtained on both GaAs and InSb substrates at a growth temperature of 455 deg C. X-ray diffraction measurements showed resolved peaks of In(1-x)Tl(x)Sb and InSb films. Infrared absorption spectrum of In(1-x)Tl(x)Sb showed a shift toward lower energies compared to InSb spectrum. Hall mobility data on In(1-x)Tl(x)Sb/InSb/GaAs structure showed enhanced mobility at low temperatures compared to InSb/GaAs structure.