ESDIAD Study of Step Site Bonding on a Vicinal Si(100) Surface Upon Cl2 Adsorption.

摘要

Characteristic chlorine bonding sites have been detected on a vicinal Si(100) single crystal surface exposing Si(100) terraces. 7-8 Si atoms in width. These terraces are separated by 2-atom layer height steps. Following annealing to 673 K. three C1+ beams are observed by the electron stimulated desorption ion angular distribution (ESDIAD) method. Two of the C1+ beams originate from silicon-dimer dangling bond sites on the Si(100) terraces. The third C1+ beams is associated with the Si-C1 bond on the step sites. and it emits Cl+ at a polar angle of 24 +/1 deg with respect to the <100> direction. in the downstairs direction. The direction of Cl+ emission from the step site is qualitatively consistent with the theoretical model of the step reconstruction proposed by Chadi. Chlorine, Step sites, Si(100), Vicinal, Etching.