Novel Growth Technologies for In Situ Formation of Semiconductor Quantum WireStructures

摘要

Novel growth technologies were developed for low dimensional quantum materialsand devices. Non-hydride MOCVD and use of strain to produce InP quantum dots have been achieved. This ONR contract was key to our development of the less hazardous novel non-hydride sources, tertiarybutyl arsine (TBA) and tertiarybutyl phosphine (TBP) for the growth on InP based electronic devices. Indium Phosphide channel JFET were fabricated by MOCVD using tertiarybutylphosphine (TBP) as the alternative source for phosphine for the first time. We have developed the Stranski-Krastanow (SK) growth mode for the in-situ formation of InP quantum dots. It has been observed that many strained systems exhibit Stranski-Krastanow growth, where the epitaxy initiates in two dimensions but transforms to three dimensions with the formation of dislocations in response to the energetics and kinetics of the layer.