The distribution feedback semiconductor laser null which uses quantum thin line or the quantum well formation which was formed by quantum thin line or the formation manner, and the said formation manner of quantum well

摘要

PROBLEM TO BE SOLVED: To provide a formation technique of a quantum wire capable of demonstrating a superior shape and sufficient characteristics in a distributed feedback semiconductor laser and the like with respect to a formation process of a quantum wire formed on a grating substrate.;SOLUTION: A plurality of V grooves expanded in [01-1] directions on a (100) GaAs substrate 10 are etched so that each side becomes (111) A face with a sub-micron order pitch on the surface of the GaAs substrate 10 and an angle of V groove becomes 80 degrees or less after a removal processing of a surface oxide film. A heat cleaning step is carried out within the range from 680 to 720°C, and afterwards a GaAs buffer layer 16 is formed on the surface of the substrate 10, so the dull of the top between V grooves that became dull by the heat cleaning step is recovered. Moreover, after an AlGaAs layer 11, of which an Al composition ratio is from 0.3 to 0.6, is grown as a clad layer within a growth temperature range from 670°C to 685°C, GaAs is supplied and a plurality of GaAs quantum wires 13 of shape like a crescent moon in cross section is formed as an array in the V groove.;COPYRIGHT: (C)2002,JPO