首页> 美国政府科技报告 >Design of Phosphorus-Containing MWIR Type-II Superlattices for Infrared Photon Detectors.
【24h】

Design of Phosphorus-Containing MWIR Type-II Superlattices for Infrared Photon Detectors.

机译:用于红外光子探测器的含磷mWIR II型超晶格的设计。

获取原文

摘要

Type-II strained layer superlattices (SLSs) offer a broad range of design degrees of freedom to help optimize their properties as absorber layers of infrared photon detectors. We theoretically examine a new class of mid-wavelength infrared (2-5 micron bandpass) Type-II structures with two-layer InGaSb/InPSb and four-layer InAs/GaSb/InAs/InPSb SLS periods. Phosphorous-containing SLSs are a promising approach to improving infrared photon detector performance due to providing a new set of material properties, including favorable valence band offsets. P-based SLSs of four-layer type InAs/GaSb/InAs/InPSb were found to be among the best 5-micron gap SLSs that we have modeled. Among the studied designs, the lowest dark current in an ideal structure is predicted for a four-layer 23.6 Angstrom InAs/20 Angstrom GaSb/23.6 Angstrom InAs/60 Angstrom InP0.62Sb0.38 SLS. Its predicted ideal dark current is about 35 times lower than an n-type HgCdTe-based photodiode absorber and six times lower than a p-type HgCdTe one for the same bandgap, temperature, and dopant concentration. We also discuss a defect mitigation strategy that involves positioning the SLS gap in an energy range that avoids defect levels and show how this applies to the aforementioned P-containing SLS.

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号