机译:GaAs衬底上生长的n-B-p设计的中波红外InAs / GaSb II型超晶格光电探测器
ShanghaiTech Univ, Sch Informat Sci & Technol, Optoelect Device Lab, Shanghai 201210, Peoples R China;
UCL, Dept Elect & Elect Engn, London WC1E 7JE, England;
ShanghaiTech Univ, Sch Informat Sci & Technol, Optoelect Device Lab, Shanghai 201210, Peoples R China;
UCL, Dept Elect & Elect Engn, London WC1E 7JE, England;
UCL, Dept Elect & Elect Engn, London WC1E 7JE, England|Univ Elect Sci & Technol China, Inst Fundamental & Frontier Sci, Chengdu 610054, Peoples R China;
ShanghaiTech Univ, Sch Informat Sci & Technol, Optoelect Device Lab, Shanghai 201210, Peoples R China;
GaAs substrate; InAs/GaSb type-II superlattice; mid-wave infrared; photodetector;
机译:中波红外INAS / GASB Type-II超晶格光电探测器,N-B-P设计在GaAs衬底上生长
机译:基于INAS / GASB超晶格的中红外线间隙级联光电探测器在天然汽油和晶格 - 不匹配的GAAs基材上生长
机译:基于II型InAs / GaSb / AlSb超晶格的高性能偏置可选三色短波/中波/长波红外光电探测器
机译:在GaAs衬底上生长的中波INAS / GASB超晶图PIBN红外光电探测器
机译:II型InAs / GaSb超晶格红外光电探测器优化和门控光电探测器阵列实现。
机译:基于II型InAs / GaSb / AlSb超晶格的高性能偏置可选三色短波/中波/长波红外光电探测器
机译:中波红外INAS / GASB Type-II超晶格光电探测器,N-B-P设计在GaAs衬底上生长