Electric-Field Domains in Semiconductor Superlattices: Resonant and Non-Resonant Tunneling.

摘要

Photoluminescence experiments detecting the occupation of higher subbands in GaAs-Al(x)Ga(1-x)As superlattices are used to determine the field strengths of electric-field domains. While the magnitude of the electric field in the low-field domain corresponds to resonant alignment of subbands in adjacent wells, the field strength in the high-field domain is below the value corresponding to the resonant field. These results are interpreted in terms of a simple model based on current conservation. (jg).