Blue Semiconductor Lasers Based on Wide-Band-Gap II-VI Materials

摘要

A high resolution study of the optical emission from nitrogen-plasmas produced byan Oxford Applied Research radio frequency plasma source is reported. The use of electron cyclotron resonance (ECR) plasma sources has led to recent advances in the growth of GaN and other III-V nitride semiconductors by molecular beam epitaxy (MBE). Methods have been developed for the MBE-growth of integrated heterostructure devices containing both narrow-band-gap and wide-band-gap II-VI materials. Device processing procedures were also developed.