Study of spectral characteristics of materials for IR lasers based on II-VI semiconductors doped with iron-group ions

摘要

The spectral features of the energy structure of Co2+, Ni2+, and Fe2+ ions in semiconductor materials ZnO, ZnS, ZnSe, ZnTe, CdO, CdS, CdSe, CdTe and the relation of these structures to the band gap are studied. The feasibility of lasing in these materials in the range of 1.5-3 A mu m is estimated.