Comparison of Optoelectronic Properties of Lattice-Matched and Strained Quantum-Well and Quantum-Wire Structures

摘要

In this paper we use the k (dot) p formalism to carry out a careful comparison ofquantum-well and quantum-wire laser structures. Such a study is important to identify quantitatively what improvements are to be expected by using the more-difficult-to-fabricate quantum-wire structures. Such a study has not been reported, although qualitatively it has been suggested that one expects improvements by utilizing quantum wire structures. For completeness we will study the following cases: lattice-matched quantum-well and quantum-wire structures in (001) and (111) geometries; strained quantum-well and quantum-wire structures; temperature dependence of the laser gain characteristics in quantum wells and quantum wires.