WOCSDICE '95 Workshop On Compound Semiconductor Devices And Intergrated Circuits

摘要

Partial contents: Properties and Applications of GaN Films; Carbon Doping ofInGaAs for InP-Based HBTs using Liquid CCl4 Source; GaAs MOVPE Overgrowth of nm-sized Tungsten Wires; MOCVD for HBT and HEMT Technology; Semiconductor Technologies; Limitation in concentration and mobility for Si delta-doping and Si monolayers in GaAs; Modification of InGaAs/InAlAs Hetero-Barriers by Delta Doping; New Electronic Materials: Low Temperature Grown GaAs and InP. jg p. 2.