Compound-Cavity, High-Power, Modelocked Semiconductor Laser

摘要

The invention is for a new type of an efficient and compact laser system, basedon semiconductor gain medium, which produces high peak power. The laser system comprises: a compound cavity laser defined by first and second reflective elements; a developing structure, having a first end containing the first reflective element and a second end, being disposed in the compound cavity laser and being responsive to an RF frequency signal within a preselected RF frequency range for developing and reflecting from the first reflective element modelocked laser pulses at a selected wavelength; a first amplifier disposed between the developing structure and the second reflective element and being responsive to the reflected modelocked laser pulses from the developing structure for amplifying the modelocked laser pulses at the selected wavelength, the first amplifier having an end containing the second reflective element for transmitting a first portion of the amplified modelocked laser pulses there through and for reflecting a second portion of the amplified modelocked laser pulses back toward the developing structure; and a nonlinear element for converting the first portion of the amplified modelocked laser pulses from said first amplifier to amplified modelocked laser pulses at a desired frequency-converted wavelength.