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High-power ultrashort external cavity modelocked semiconductor lasers.

机译:大功率超短外腔锁模半导体激光器。

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摘要

The objective of this thesis is to generate high power ultrashort optical pulses using external cavity modelocked semiconductor lasers for commercial applications including high speed telecommunications, the large scale printing, 3-D display, confocal microscopy, low coherence optical tomography, nonlinear spectroscopy and femtosecond time-resolved spectroscopy.; The ultrafast dynamics of each individual optical element in the cavity are measured to study their contribution to modelocking. The key physical processes involved with the modelocked operation of external cavity semiconductor lasers are self phase modulation (SPM) and gain saturation of the semiconductor optical amplifier (SOA), the absorption saturation of a saturable absorber and the group velocity dispersion (GVD) caused by linear elements in cavity. In this thesis, it is experimentally proved that the integrating SPM of the SOA leads to a parabolically chirped asymmetric temporal pulse shape, while the linearization of the chirp is obtained by the combined effects of the GVD and the saturable absorption. By using these experimental results, a theoretical model is developed to predict the pulse shaping effects of external cavity modelocked semiconductor lasers. Finally, this theoretical model is supported by a computer simulation.; To address the technical and physical issues associated with high power generation, a novel semiconductor optical amplifier design using the inverse bow-tie shaped geometry was introduced to realize a high power modelocked laser system. The salient feature of employing this structure is that one can achieve the high output powers characteristic of tapered structures while maintaining a small amount of astigmatism. With the development of these devices, an external cavity laser was designed, built and experimentally characterized for CW and modelocked operation. Hybrid modelocked operation produced optical pulses with an average output power of 400 mW and temporal width of ∼6 ps.; Finally, novel intracavity spectral shaping techniques were introduced in an effort to generate ultra short optical pulses. Pulses with a substantially broad optical spectrum were generated as a result of the spectral shaping technique. The spectral phase of these pulses were characterized and compensated through various techniques. As a result, optical pulses with a temporal duration of 250 fs were generated, which is only 10% exceeding the transform limit.
机译:本文的目的是使用外腔模型对接半导体激光器产生高功率超短光脉冲,用于商业应用,包括高速通信,大规模印刷,3D显示,共聚焦显微镜,低相干光学层析成像,非线性光谱和飞秒时间-分辨光谱。测量腔体中每个光学元件的超快动力学,以研究其对锁模的作用。与外腔半导体激光器的模型化操作有关的关键物理过程是自相位调制(SPM)和半导体光放大器(SOA)的增益饱和,可饱和吸收体的吸收饱和以及由以下原因引起的群速度色散(GVD)腔中的线性元素。本文通过实验证明,SOA的积分SPM导致抛物线线性调频的不对称时间脉冲形状,而线性调频的线性化是通过GVD和饱和吸收的综合作用获得的。通过使用这些实验结果,建立了一个理论模型来预测外腔对接半导体激光器的脉冲整形效果。最后,该理论模型得到计算机仿真的支持。为了解决与高功率产生相关的技术和物理问题,引入了一种使用反向蝴蝶结形几何形状的新型半导体光放大器设计,以实现高功率对接激光系统。采用这种结构的显着特征是,在保持少量散光的同时,可以实现锥形结构的高输出功率特性。随着这些设备的发展,为CW和Modelocked操作设计,制造并实验表征了外腔激光器。混合式ockockock操作产生的光脉冲平均输出功率为400 mW,时间宽度约为6 ps。最后,为了产生超短光脉冲,引入了新颖的腔内光谱成形技术。光谱整形技术的结果是产生了具有基本宽光谱的脉冲。通过各种技术对这些脉冲的频谱相位进行了表征和补偿。结果,产生了时间持续时间为250 f(italic)的光脉冲,仅超过变换极限的10%。

著录项

  • 作者

    Gee, Sangyoun.;

  • 作者单位

    University of Central Florida.;

  • 授予单位 University of Central Florida.;
  • 学科 Physics Optics.
  • 学位 Ph.D.
  • 年度 2000
  • 页码 151 p.
  • 总页数 151
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 光学;
  • 关键词

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