(57) a semiconductor laser device including an OPS structure having a mirror structure is placed [Abstract] surface-emitting semiconductor multilayer (periodic) gain structure is optically pumped external cavity is disclosed. This OPS laser may provide a basic laser output power of more than about 2 watts or (2.0W). Even at a wavelength in the ultraviolet region of the electromagnetic spectrum, the sequence is the cavity frequency conversion OPS laser may provide the harmonic laser output power of about 100 milliwatts (100mW). High output power may be supplied a high output power of these single-axis mode of operation, for example. Features of the OPS laser, a heat sink assembly for cooling an OPS structure, folded resonator concept provides an optimal beam size in the nonlinear crystal optically used for frequency conversion, preferred choice of nonlinear material optically for frequency conversion and composite resonator design that amplifies the second harmonic radiation for subsequent conversion to the fourth harmonic radiation and the third is included.
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