Simulation and Modeling of Compound Semiconductor Devices

摘要

We review the simulation and modeling techniques used for popular compoundsemiconductor devices such as the Heterostructure Field Effect Transistor (HFET), the Metal Semiconductor Field Effect Transistor (MESFET), and the Heterostructure Bipolar Transistor (HBT). Starting with the basic transport theory and the numerical simulation techniques based on this theory, we proceed to give examples of Monte Carlo simulations and of 2D balance equation simulations for investigating fundamental device properties and for exploring new design concepts. Next, we present analytical HFET and MESFET models suitable for circuit simulations. These models are based on the so-called universal HBT modeling concept, and accurately reproduce FET I-V and C-V characteristics. Finally, we review basic simulation and modeling issues for HBTs.