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Molecular Beam Epitaxy Growth Technique for Quality 1.5 - 2.5 Micrometers nearInfrared Sensing Devices

机译：分子束外延生长技术的质量1.5 - 2.5微米近红外传感装置

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The objective of this Program is to develop long wavelength, lattice mismatchedInGaAs PIN diode structures grown using Molecular Beam Epitaxy (MBE). The overall

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作者
Cohen, M. J.;
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年度 1995
页码
总页数 37
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Epitaxial growth; Molecular beams; Near infrared radiation; Thermal properties; Diodes; Buffers; Optics; Detectors; Layers; Gallium arsenides; Structures; Alloys; Vapor phases; Room temperature; Quality; Aluminum; Planar structures; Electrical resistance;

机译：外延生长;分子束;近红外辐射;热性质;二极管;缓冲器;光学;探测器;层;砷化镓;结构;合金;气相;室温;质量;铝;平面结构;电阻;

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专利

1. Growth of device quality InGaP/GaAs heterostructures by gas source molecular beam epitaxy using tertiarybutyplhoshine [J] . Hironobu Sai, Hajime Fujikura, Atsushi Hirama Solid-State Electronics . 1999,第8期

机译：气体源分子束外延利用叔丁基丁硫提高器件质量InGaP / GaAs异质结构
2. Selective area growth of GaN-based structures by molecular beam epitaxy on micrometer and nanometer size patterns [J] . Cordier Y, Semond F, Moreno JC, Materials science in semiconductor processing . 2009,第1a2期

机译：在微米和纳米尺寸图案上通过分子束外延选择性生长GaN基结构
3. Characterization of undoped ZnO layers grown by molecular beam epitaxy towards biosensing devices [J] . K. Ogata, T. Komuro, K. Kama, Physica Status Solidi. C, Conferences and critical reviews . 2004,第4期

机译：通过分子束外延向生物传感设备生长的未掺杂ZnO层的表征
4. Molecular Beam Epitaxy Growth of High Mobility Compound Semiconductor Devices for Integration with Si CMOS [C] . D. Lubyshev, J. M. Fastenau, Y. Wu, MRS Meeting . 2010

机译：用于与Si CMOS整合的高迁移率化合物半导体器件的分子束外延生长
5. Growth of polar and non-polar nitride semiconductor quasi-substrates by hydride vapor phase epitaxy for the development of optoelectronic devices by molecular beam epitaxy [D] . Moldawer, Adam Lyle 2013

机译：氢化物气相外延生长极性和非极性氮化物半导体准衬底，用于分子束外延开发光电子器件
6. InGaAs Diodes for Terahertz Sensing—Effect of Molecular Beam Epitaxy Growth Conditions [O] . Vilius Palenskis, Linas Minkevičius, Jonas Matukas, 2018

机译：太赫兹感测的InGaAs二极管-分子束外延生长条件的影响
7. Influence of beta-FeSi2 particle size and Si growth rate on 1.5 µm photoluminescence from Si/beta-FeSi2-particles/Si structures grown by molecular-beam epitaxy [O] . Ozawa Y., Ohtsuka T., Li Cheng, 2004

机译：β-FeSi2粒径和Si生长速率对分子束外延生长的Si /β-FeSi2-颗粒/ Si结构的1.5 µm光致发光的影响

Molecular Beam Epitaxy Growth Technique for Quality 1.5 - 2.5 Micrometers nearInfrared Sensing Devices

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