Erbium Doped Silicon LEDS Using IC Compatible Processing

摘要

The purpose of this program is to demonstrate the capability of the IC compatibleprocess technology of rare earth ion implantation for the integration of photonic interconnection with silicon based electronics. As microchip technology pushes packing density, speed, and power requirements ever higher, interconnects are getting smaller and more closely spaced. Design parameters and therefore performance characteristics are presently limited by the power dissipation, bandwidth, interconnection (pin-out) density, and reliability constraints of aluminum interconnects such as electromigration and stress migration. The most appropriate solution is to employ erbium doped silicon light emitters, silicon based waveguides, and silicon based detectors to provide an IC compatible process technology. jg p.2.