Exploration of Entire Range of III-V Semiconductors and Their Device Applications

摘要

The most recent advances in III-V semiconductors. from wide band gap AlN to thenew narrow band gap InTlSb material are examined. Specifically results for AIN, GaN, and their alloys are examined with a view to applications in the blue-ultraviolet spectral range. For operation in the long wavelength infrared range (8-12 micrometers) the potential and realisation of a new III-alloy InTlSb are presented. The GaInAsP/GaAs system has also been investigated as an alternative to the widely used AlGaAs/GaAs system for device applications in the intermediate spectral range. Attention is given to the crystal growth technique and physical properties of these III-V semiconductors. Demonstrations and the performance in service of several devices based on these material systems, such as high power GaInAsP diode lasers and In TlSb infrared detectors are described. jg.