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首页> 外文期刊>Physica, E. Low-dimensional systems & nanostructures >Entangled states of electron-hole complex in a single InAs/GaAs coupled quantum dot molecule
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Entangled states of electron-hole complex in a single InAs/GaAs coupled quantum dot molecule

机译:单个InAs / GaAs耦合量子点分子中电子-空穴配合物的纠缠态

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摘要

We summarize here results of calculations and experiments on electron and valence hole states in a single pair of vertically stacked and electronically coupled InAs self-assembled quantum dots. In perfectly aligned quantum dots one can relate an electron-hole complex to a pair of entangled qubits. The information carried by individual qubit is related to the quantum dot index (isospin) of individual carrier. The quality of fabricated quantum dot molecules is identified from the exciton fine structure in a magnetic field. (C) 2002 Elsevier Science B.V. All rights reserved. [References: 18]
机译:我们在这里总结了在一对垂直堆叠和电子耦合的InAs自组装量子点中电子和化合价空穴态的计算和实验结果。在完全对准的量子点中,一个电子-空穴复合物可以与一对纠缠的量子位相关。单个量子位携带的信息与单个载波的量子点指数(isospin)有关。制备的量子点分子的质量由磁场中的激子精细结构确定。 (C)2002 Elsevier Science B.V.保留所有权利。 [参考:18]

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