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首页> 外文期刊>Physical review. B, Condensed Matter And Materials Physics >Excitonic molecule in a quantum dot: Photoluminescence lifetime of a single InAs/GaAs quantum dot
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Excitonic molecule in a quantum dot: Photoluminescence lifetime of a single InAs/GaAs quantum dot

机译:量子点中的激子分子:单个InAs / GaAs量子点的光致发光寿命

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摘要

Time dependence of the photoluminescence (PL) attributed to the exciton and biexciton in a single InAs/GaAs quantum dot is investigated at 4.3 K with microscopic spectroscopy. Dynamical behavior of the PL decay and the excitation intensity dependence of the exciton and biexciton PL are analyzed by rate equations assuming a cascading recombination from the biexciton to exciton state. The analysis shows that the biexciton lifetime is longer than the exciton lifetime. The estimated ratio of the biexciton lifetime to the exciton lifetime shows a molecular nature of the biexciton in the large quantum dots compared with the exciton Bohr radius.
机译:利用显微镜研究了在单个InAs / GaAs量子点中归因于激子和双激子的光致发光(PL)的时间依赖性,其在4.3 K下进行了研究。通过速率方程分析PL衰减的动力学行为以及激子和双激子PL的激发强度依赖性,假设从双激子到激子状态的级联重组。分析表明,双激子寿命比激子寿命长。与激子玻尔半径相比,估计的双激子寿命与激子寿命之比显示了双激子在大量子点中的分子性质。

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