Fano-Kondo effect in side-coupled double quantum dot

摘要

We simulate the Kondo effect in an embedded quantum dot (QD) which is coupled to a side QD in the tight-binding model. The effect of the Coulomb interaction in the embedded QD is taken into account by the slave boson mean field theory. An analytic form of the conductance is derived by employing the scattering matrix formalism, and is expressed in terms of the Fano parameter and the broadening which are related to the tight-binding parameters. By analyzing the energy dependence of the conductance, we demonstrate that the Kondo effect is strongly modulated by the Fano effect as observed in a recent experiment.