Fano-Kondo effect in side-coupled double quantum dots at finite temperatures and the importance of two-stage Kondo screening

摘要

We study the zero-bias conductance through the system of two quantum dots, one of which is embedded directly between the source and drain electrodes, while the second dot is side coupled to the first one through a tunneling junction. Modeling the system using the two impurity Anderson model, we compute the temperature dependence of the conductance in various parameter regimes using the numerical renormalization group. We consider the noninteracting case, where we study the extent of the departure from the conventional Fano resonance line shape at finite temperatures, and the case where the embedded and/or the side-coupled quantum dot is interacting, where we study the consequences of the coexistence of the Kondo and Fano effects. If the side-coupled dot is very weakly interacting, the occupancy changes by two when the on-site energy crosses the Fermi level and a Fano-resonance-like shape is observed. If the interaction on the side-coupled dot is sizeable, the occupancy changes only by one and a very different line-shape results, which is strongly and characteristically temperature dependent. These results suggest an intriguing alternative interpretation of the recent experimental results study of the transport properties of the side-coupled double quantum dot [Sasaki et al., Phys. Rev. Lett. 103, 266806 (2009)]: the observed Fano-like conductance antiresonance may, in fact, result from the two-stage Kondo effect in the regime where the experimental temperature is between the higher and the lower Kondo temperature.