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QUANTUM DOT DEVICES WITH DOUBLE QUANTUM WELL STRUCTURES

机译:具有双量子阱结构的量子点设备

摘要

Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack including first and second quantum well layers, wherein a barrier layer is disposed between the first and second quantum well layers; a first set of gates disposed on the quantum well stack such that the first quantum well layer is disposed between the barrier layer and the first set of gates; and a second set of gates disposed on the quantum well stack such that the second quantum well layer is disposed between the barrier layer and the second set of gates.
机译:本文公开了量子点设备以及相关的计算设备和方法。例如,在一些实施例中,量子点装置可以包括:包括第一和第二量子阱层的量子阱堆叠,其中,阻挡层设置在第一和第二量子阱层之间;第一组栅极设置在量子阱堆叠上,使得第一量子阱层设置在势垒层与第一组栅极之间;第二组栅极设置在量子阱堆叠上,使得第二量子阱层设置在势垒层与第二组栅极之间。

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