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GaInAsSb/AlGaAsSb lasers in the wavelength range between 2.73 mu m and 2.93 mu m

机译:GaInAsSb / AlGaAsSb激光器的波长范围在2.73微米至2.93微米之间

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摘要

Compressively strained multiple quantum well lasers in the GaInAsSb/AlGaAsSb material system are reported. Indium concentrations between 40% and 47.5% were chosen for the GaInAsSb quantum wells. Compressive strains varied between 1.16% and 1.43%. The lasers worked continuous wave at room temperature up to a wavelength of 2.81 mum. For a laser with 2.93 mum wavelength continuous wave operation was found up to a temperature of -23degreesC. This laser worked in pulsed operation at 15degreesC. (C) 2003 Elsevier B.V. All rights reserved. [References: 8]
机译:报道了GaInAsSb / AlGaAsSb材料系统中的压缩应变多量子阱激光器。 GaInAsSb量子阱的铟浓度选择为40%至47.5%。压缩应变在1.16%和1.43%之间变化。激光器在室温下连续波达到2.81微米的波长。对于波长为2.93微米的激光器,发现其在高达-23摄氏度的温度下仍可连续工作。该激光器在15℃下以脉冲方式工作。 (C)2003 Elsevier B.V.保留所有权利。 [参考:8]

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