Formation of lateral-two-dimensional ordering in self-assembled InGaAs quantum dot on high index substrates

摘要

The in-plane strain relaxation properties on InGaAs/GaAs(3 1 1)B were investigated by means of reciprocal space mapping using triple axis X-ray diffractometry to study the origin of two-dimensional ordering of InGaAs quantum dots (QDs) on a GaAs(3 1 1)B substrate. From the X-ray data, the strain relaxation anisotropy in the InGaAs laver was observed to be larger on the GaAs(3 1 1)B substrate than on (0 0 1). It is proposed that the large strain anisotropy is responsible for the QD ordering observed on the (3 1 1)B surface. (C) 2001 Elsevier Science B.V. All rights reserved. [References: 8]