Magnetoresistance of a Si-MOSFET structure in a parallel magnetic field

摘要

We measured the magnetoresistance of a two-dimensional electron gas in a strongly disordered silicon MOSFET system in the presence of a parallel magnetic field up to 40 T. We observe resistance saturation for magnetic fields larger than the calculated magnetic field for fully spin-polarized electron gas. Our experimental results on the magneto resistance can be quantitatively described by a transport theory taking into account screening and finite width effects in a spin-polarized electron gas. (C) 2004 Elsevier B.V. All rights reserved.