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Magnetic RAM cell, has reference layer structure placed bi-directional and parallel to axis by magnetic field, which is put on during write operation, so that information in reference layer structure is stored
Magnetic RAM cell, has reference layer structure placed bi-directional and parallel to axis by magnetic field, which is put on during write operation, so that information in reference layer structure is stored
The cell (200) has a reference layer structure (204) with an antiferromagnetic layer structure for setting a magnetic adjustment of the reference layer structure. The reference layer structure exhibits a higher magnetic coercive force and is magnetically polarizable. The reference layer structure is placed bi-directional and parallel to an axis by a magnetic field, which is put on during a write operation, so that information in the reference layer structure is stored during heating of an antiferromagnetic layer structure over its blocking temperature. An independent claim is also included for a method for operation of a magnetic RAM cell.
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