Structural characterization of ZnO films grown on SiO2 by the RF magnetron sputtering

摘要

We have deposited the ZnO thin films on SiO2 substrate using RF magnetron sputtering method and have investigated the effect of annealing on the structural quality of ZnO films in the range of 600-1050degreesC. Annealing at higher temperature was found to enhance the c-axis orientation and the grain size of ZnO films. (C) 2003 Elsevier Science B.V. All rights reserved. [References: 17]