Formation of InGaN nanorods with indium mole fractions by hydride vapor phase epitaxy

摘要

This work demonstrates the formation of InGaN nanorod arrays with indium mole fractions by hydride vapor phase epitaxy. The nanorods grown on (0001) sapphire substrates are preferentially oriented in the c-axis direction. We found that the In mole fractions in the nanorods were linearly increased at x < 0.1. However, In mole fractions were slightly increased at x > 0.1 and then were gradually saturated at x = 0.2. CL spectra show strong emissions from 380 nm (x = 0.04, 3.26 eV) to 470 nm (x = 0.2, 2.64 eV) at room temperature.