Structural and optical properties of cubic-CdS and hexagonal-CdS thin films grown by MOCVD on GaAs substrates using a single-source precursor C14H30CdN2S4

摘要

We have grown single-phase thin films of CdS on GaAs substrates. The structure of the CdS film has been determined by X-ray diffraction to be either zincblende or wurtzite depending on whether the orientation of the substrate is [100] or [111]. The films are found to be strained by 1% or less. The quality of the films have also been characterized by temperature dependent photoluminescence (PL) and multiphonon resonant Raman scattering (RRS). The PL spectra are dominated by excitonic emission. The observed peak energies are equal to those reported in bulk CdS within experimental errors. RRS of as many seven longitudinal optical (LO) phonon have been observed. The overall quality of the thin films are found to be comparable to those of bulk CdS samples. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.