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Effect of a MgO interlayer on the structural and magnetic properties of Cosub 2Crsub 0.6Fesub 0.4Al thin films epitaxially grown on GaAs substrates

机译:MgO中间层对在GaAs衬底上外延生长的Co sub 2 Cr sub 0.6 Fe sub 0.4 Al薄膜的结构和磁性的影响

摘要

The effect of a MgO interlayer on the structural and magnetic properties of Co2Cr0.6Fe0.4Al (CCFA) thin films epitaxially grown on GaAs substrates by sputtering was investigated. When the MgO interlayer thickness was 1.0 nm or less, the CCFA films were grown with a cube-on-cube relation to GaAs and no significant decrease in either the x-ray diffraction intensity or saturation magnetization was observed. In contrast, when the MgO thickness was 1.5 nm or more, the CCFA film was rotated by 45° in the (001) plane with respect to GaAs, and both the x-ray diffraction intensity and saturation magnetization decreased. All samples showed strong magnetic anisotropy, in which a uniaxial anisotropy with an easy axis of [110]GaAs or [1−10]GaAs dominated with a slight cubic anisotropy having an easy axis of〈110〉CCFA superimposed. ©2007 American Institute of Physics
机译:研究了MgO中间层对通过溅射外延生长在GaAs衬底上的Co2Cr0.6Fe0.4Al(CCFA)薄膜的结构和磁性的影响。当MgO夹层厚度为1.0nm或更小时,CCFA膜以与GaAs的立方对立方关系生长,并且未观察到x射线衍射强度或饱和磁化强度的显着降低。相反,当MgO厚度为1.5nm以上时,CCFA膜相对于GaAs在(001)面中旋转45°,x射线衍射强度和饱和磁化强度均降低。所有样品均显示出强磁各向异性,其中易轴为[110] GaAs或[1-10] GaAs的单轴各向异性与易轴为<110> CCFA的轻微立方各向异性占主导。 ©2007美国物理研究所

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