Thermodynamic Analysis on the MOVPE Growth of Nitride Semiconductors Using Hydrazine

摘要

A thermodynamic analysis is performed on the MOVPE growth of nitride semiconductors using hydrazine (N_2H_4) instead of NH_3. Equilibrium partial pressures are calculated for various deposition parameters and growth regions are examined. It is predicted that the growth of nitride occurs drastically in the N_2H_4 system, especially for the indium containing nitride without the deposition of In droplets. It is also shown that the composition unstable region for InGaN is suppressed in the N_2H_4 system and the effect of hydrogen on the composition of InGaN is small in the N_2H_4 system compared with the NH_3 system.