Double thermal donors in Czochralski-grown silicon heat-treated under atmospheric and high hydrostatic pressures

摘要

The formation kinetics of Thermal Double Donors, a dominant family of thermal donors in Czochralski-grown silicon annealed at T < 600 degreesC, is studied in detail. A striking enhancement effect of hydrostatic pressures of about 1 GPa on their formation processes, even in a temperature region of thermal instability of these donor centers at about T = 600 degreesC under normal conditions, is clearly demonstrated. The experimental data obtained in the present work are in agreement with the recent theoretical calculations of oxygen diffusion and agglomeration processes in heat-treated Si. [References: 8]