Induced electric field effect on heavily compensated p-type semiconductors

摘要

Metallic ions introduced into p-type semiconductors can either.er diffuse as interstitial donors or build up complexes with native shallow acceptors. To determine the diffusion coefficients of donors, a method based on donor diffusion from an accumulation zone into the material can be used. However, the internal induced electric field resulting from the different mobilities of holes and charged donors greatly enhances the diffusion process when we deal with strongly compensated semiconductors. Simulation of the diffusion process taking into account both the association dissociation of complexes and the induced electric field is applied, yielding new information. The importance of the induced electric field is outlined and simulations emphasized the role of ion pairing acting as a brake mechanism for free diffusion. Furthermore we can get an insight into the donor diffusion range into the bulk of semiconductor. [References: 8]