Crystallographic characterization of sputter-deposited epitaxial Nb-Cu-Co and Nb-Cu-permalloy multilayers using electron back-scatter diffraction patterns

摘要

Epitaxial Nb-Cu-Co and Nb-Cu-Permalloy(TM) (Py) multilayers have been grown on (11 (2) over bar0) sapphire substrates by sputter deposition. Electron backscatter diffraction patterns (EBSPs) have been used to characterize 'individual layers, while atomic force microscopy was used for studying the surface topography. EBSPs have been demonstrated to be a viable technique for characterization of these thin sputtered films. EBSP results have shown that the Nb films grow as high quality epitaxial single crystals with (110)(bcc), orientations. Cu films grown on the epitaxial Nb display two in-plane epitaxial variants corresponding to two stacking sequences of {111}(fcc) planes. These Cu variants take up the Nishiyama-Wasserman orientation relationship with the underlying Nb. Subsequent sputtering of Co or Fy on the epitaxial Cu films results in the growth of two variants of 111(fcc) layers. Orientation maps of the Cu, Co and Py films, which illustrate the size and distribution of the growth variants, are presented. [References: 29]