Monte Carlo simulations of the dechannelling and back scattering of He~+ ions by loop dislocations in silicon

摘要

In this work a Monte Carlo simulation method is used to describe dechannelling and back scattering of He~+ ions channelled along the <100> axis of a defective silicon crystal. The disorder is due to a buried layer of circular dislocation loops. Remarkable differences are found with respect to the results of the standard analytical treatments.