ELECTROPHYSICAL CHARACTERISTICS OF MIS STRUCTURES BASED ON GRADED BAND-GAP MBE HgCdTe WITH GROWN IN SITU CdTe AS A DIELECTRIC

摘要

Capacitance-voltage characteristics of MIS structures based on graded band-gap heteroepitaxial HgCdTe (x = 0.22-0.23 and 0.32-0.36) with grown in situ CdTe as a passivating coating are examined. The average surface-state densities as well as mobile- and fixed-charge densities are determined for the HgCdTe/CdTe, HgCdTe/CdTe-SiO_2-Si_3N_4, and HgCdTe/CdTe-ZnTe systems. It is shown that grown in situ CdTe forms a fairly qualitative interface, and deposition of additional SiO_2-Si_3N_4 and ZnTe layers makes it possible to control the electric strength and charges in the dielectric used.