RECOMBINATION CURRENTS IN LIGHT-EMITTING DIODES BASED ON (Al_xGa_(1-x))_(0.5)In_(0.5)P/(Al_yGa_(1-y))_(0.5)In_(0.5)P MULTIPLE QUANTUM WELLS

摘要

The results of experimental studies of the effect of temperature on the forward current-voltage characteristics of light-emitting diodes (LEDs) with an active region consisting of multiple (AlxGa1-x)0.5In0.5P/(AlyGa1-y)0.5In0.5P quantum wells are reported. It is shown that several regions can be identified in the current-voltage characteristic in the temperature range 210-390 K. Analysis shows that the first region is associated with the Sah-Noyce-Shockley recombination current and the second one - with the radiative recombination current.