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Thin films and nanowires of molecule-based conductors and magnets

机译:分子导体和磁体的薄膜和纳米线

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Nanowires of tetrathiafulvalene (TTF)[Ni(dmit)_2]_2 (dmit~(2-):2-thioxo-1,3-dithiole-4,5-dithiolato) are obtained by successively dipping SSCC in acetonitrile solutions of (Bu_4N)[Ni(dmit)_2] and (TTF)_3(BF_4)_2, observed by S.E.M. and AFM, and characterized by Raman micro-probe. Thin films of (TTF)[Ni(dmit)_2]_2 are obtained by the same process but using a new original silicon conversion coating (SiCC). The deposit is observed by S.E.M., and characterized by Raman micro-probe and transport measurements. TTF-tetracyanoquino-dimethane (TCNQ) individual nanowires and (TTF)[Ni(dmit)_2]_2 nano-needles scattered on the surface of the substrate or aggregated in wads, are obtained by the dipping process on oxide-free micro-rough silicon (O-f.Mr.Si). adherent thin films of the V(TCNE)_2 (TCNE: tetracyanoethylene) magnet are deposited on (O-f.Mr.Si) substrates by chemical vapor deposition from bis(benzene)vanadium and TCNE as precursors.
机译:通过将SSCC依次浸入(Bu_4N)的乙腈溶液中获得四硫富瓦烯(TTF)[Ni(dmit)_2] _2(dmit〜(2-):2-thioxo-1,3-dithiole-4,5-dithiolato)纳米线)[Ni(dmit)_2]和(TTF)_3(BF_4)_2,通过SEM观察和AFM,并且具有拉曼显微探针的特征。 (TTF)[Ni(dmit)_2] _2薄膜可通过相同的方法获得,但使用的是新的原始硅转化涂层(SiCC)。沉积物通过S.E.M.观察,并通过拉曼显微探针和传输测量来表征。通过在无氧化物的微粗糙表面上进行浸涂工艺,可以获得TTF-四氰基喹啉-甲烷(TCNQ)单个纳米线和散布在基材表面或聚集在棉团中的(TTF)[Ni(dmit)_2] _2纳米针。硅(Of.Mr.Si)。 V(TCNE)_2(TCNE:四氰基乙烯)磁体的粘附薄膜通过化学气相沉积法从双(苯)钒和TCNE作为前体沉积在(O-f.Mr.Si)基板上。

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