Gas-phase and surface kinetics of epitaxial silicon carbide growth involving chlorine-containing species

摘要

A detailed chemical mechanism for the silicon carbide epitaxial growth using light hydrocarbons, silane, and either chlorosilanes and/or HCl as the chlorine source is presented. The mechanism involves 153 gas-phase and 76 surface reactions among 47 gas-phase and 9 surface species, respectively. A comparison with the performances of the standard process using silane-hydrocarbons is presented, and the observed growth rate increase and the disappearing of the homogeneous silicon droplets in gas phase is explained.