The technique of electron beam annealing for fabricating MgB_2 thin films has been explored. MgB_2 thin films were prepared by e-beam evaporation of M-B precursor films on 6H-SiC (0001) substrates followed by exsitu electron beam annealing without any extra Mg vapor or argon gas protection. The very short annealing duration, about 1s, effectively prevented volatilization and oxidation of Mg and decomposition of MgB_2. In comparison with the MgB_2 thin films grown by other techniques, our films show medium qualities including a superconducting transition temperature of T_~(conset) ～ 35.3K, a transition width ΔT _c ～ 0.2K, and a critical current density of J_c(5K, 0T) ～ 3.2 × 10~6Acm~(-2). Such an electron beam annealing technique has potential for the fabrication of large-scale MgB _2 thin films as well as MgB_2 wires and tapes.
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