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Strontium titanate buffer layers deposited on rolled Ni substrates with metal organic deposition

机译:钛酸锶缓冲层通过金属有机沉积沉积在轧制的Ni基片上

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SrTiO_3 buffer layers have been deposited on rolled Ni substrates using metal organic deposition (MOD) for HTS-coated conductors. The MOD process is based on the formation of the SrTiO_3 layer coated on the surface of a Ni substrate using dip-coating as well as spin-coating techniques from a solution-based precursor, which is prepared by dissolving strontium acetate and titanium (IV) butoxide in acetic acid and methanol. The films were annealed at 950 deg C for 2 h under 5 percent H_2-Ar gas flow. X-ray diffraction (XRD) shows that the buffer layers on the Ni tape are highly oriented. The pole figure indicates a single cube-on-cube texture in addition to SEM and AFM observations revealing a continuous, dense, smooth and crack-free microstructure for the coated buffer. These results offer the potential of further manufacturing coated conductors with high current density.
机译:SrTiO_3缓冲层已使用HTS涂层导体的金属有机沉积(MOD)沉积在轧制的Ni基体上。 MOD工艺基于使用浸涂以及通过溶解乙酸锶和钛(IV)制备的溶液基前体的旋涂技术,形成在Ni基体表面涂覆的SrTiO_3层的形成乙酸和甲醇中的丁醇。将膜在5%的H_2-Ar气流下于950℃退火2小时。 X射线衍射(XRD)表明,Ni带上的缓冲层是高度取向的。极图表示除了SEM和AFM观察之外,还有一个单一的多维数据集纹理,它显示了包被缓冲液的连续,致密,光滑和无裂纹的微观结构。这些结果提供了进一步制造具有高电流密度的涂覆导体的潜力。

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