SYNTHESIS AND CHARACTERIZATION OF CUBIC SILICON CARBIDE (β-SiC) AND TRIGONAL SILICON NITRIDE (α-Si{sub}3N{sub}4) NANOWIRES

摘要

By varying the final heating temperature in the range 1050℃ - 1300℃, cubic silicon carbide (β-SiC) and/or trigonal silicon nitride (α-Si{sub}3N{sub}4) nanowires (NWs) were prepared by direct thermal treatment under nitrogen, of commercial silicon powder and graphite. Long and highly curved β-SiC NWs were preferentially grown below 1200℃, while straight and short α-Si{sub}3N{sub}4 NWs were formed above 1300℃. Between these two temperatures, a mixture of both nanowires was obtained. The structure and chemical composition of these nanostructures have been investigated by SEM, HRTEM, EDX and EELS.