SiC METHOD FOR PREPARING HIGH DENSITY SILICON CARBIDE COMPOSITE BY UNIFORM GROWTH OF SIC NANOWIRE USING CHEMICAL VAPOR DEPOSITION AND SILICON CARBIDE COMPOSITE PREPARED BY THE SAME

摘要

The present invention relates to a method for producing a high-density silicon carbide composite by uniform growth of SiC nanowires using chemical vapor deposition, and to a silicon carbide composite prepared therefrom, and more particularly, to a chemical vapor deposition (CVD) composite on a fiber preform. ) Method to uniformly grow SiC nanowires and then apply a chemical vapor deposition process to prepare a densified silicon carbide composite, and to a silicon carbide composite manufactured thereby. According to the present invention, it is possible to reduce the formation of large pores that occur when preparing a conventional SiC composite by a chemical vapor deposition method, thereby improving the density, thereby improving the strength, and further improving the thermal conductivity and fracture toughness. .