Fracture Strength of Plate and Tubular Forms of Monolithic Silicon Carbide (SiC)Produced by Chemical Vapor Deposition (CVD)

摘要

The fracture strength of silicon carbide (SiC) plate deposits produced byChemical Vapor Deposition (CVD) was determined from room-temperature to 1500 degrees C using a standard 4-point flexural test method (ASTM Cl 161). CVD SiC materials produced by two different manufacturers are shown to have only slightly different flexural strength values, which appear to result from differences in microstructure. Although CVD deposition of SiC results in a textured grain structure, the flexural strength was shown to be independent of the CVD growth direction. The orientation of machining marks was shown to have the most significant influence on flexural strength, as expected.