Preparation of HfO_2 nano-films by atomic layer deposition using HfCl_4 and O_2 under atmospheric pressure

摘要

HfO_2 nano-films were deposited onto a Si(100) substrate using an alternate reaction of HfCl_4i and O_2 under atmospheric pressure. Self-limiting growth of the HfO_2 was achieved in the range of the growth temperature above 873 K. The X-ray diffraction of the HfO_2 nano-films showed a typical diffraction pattern assigned to the monoclinic polycrystalline phase. This gives effective permittivity value of 9.6 for the HfO_2 nano-film grown at 573 K.