Fabrication and characterization of Y2O3 stabilized ZrO2 films deposited with aerosol-assisted MOCVD

摘要

With Y(DPM)(3) and Zr(DPM)(4) as precursors, yttria-stabilized zirconia (YSZ) thin films were deposited onto NiO-SDC substrates using a modified aerosol-assisted metal-organic chemical vapor deposition (AAMOCVD) apparatus, where high power halogen lights were used as assisted heaters. Cubic structured YSZ was obtained when the films were deposited at 650 degrees C. The cubic YSZ transformed to tetragonal structure after annealed at 1100 degrees C for 3 h, possibly due to crystallite growth. Y/Zr mole ratio of the deposited film depends on the Y/Zr ratio of the precursors, indicating that the thin film composition can be effectively controlled. Scanning electron microscopy (SEM) analysis showed a strong bonding between the films and substrates. Thickness of the film was estimated to be about 9 mu m with a high growth rate of 50 nm/min, which inferring the AAMOCVD is very effective in synthesis of YSZ films. AC impedance analyses showed that the ionic conductivity of the YSZ film is 0.034 S/cm at 800 degrees C, which is slightly less than that of bulk YSZ, and the conduction activation energy (E-a) changed from 80.8 kJ/mol to 138.8 kJ/mol at 640 degrees C with decreasing temperature. (c) 2006 Elsevier B.V. All rights reserved.