Fabrication of high thermal conductive Al-cBN ceramic sinters by high temperature high pressure method

摘要

Al-cBN ceramic sinters were fabricated by sintering micro-powder mixture of Al and cBN under high temperature and high pressure condition. Differential scanning calorimetry (DSC), X-ray diffraction (XRD), scanning electronic microscopy (SEM) and energy-dispersive X-ray spectroscopy (EDS) elemental mapping analyses and laser flashing thermal conductivity measurements were performed to investigate the sintering properties and thermal conductivity of the Al-cBN ceramic sinters. XRD analysis revealed these Al-cBN ceramic sinters were composed of a large portion of cBN and of a small portion of AlN, and very little amount of AlB_(12) and hBN. Formation of boundary phase resulted in the rapid densifkation of the sinters, as well as the increase of their relative density with increasing Al additions. The Al-cBN ceramic sinters have a maximum thermal conductivity of about 1.94 W/cm K at room temperature and a much higher value of about 2.04 W/cm K at 200 °C. Their high thermal conductivity over that of A1N -hBN composites promise Al-cBN ceramic sinters favorite candidates as high efficiency heat sink materials for wide band gap semiconductors.