Ferromagnetic ordering of carbon doped GaN semiconductor: First-principles prediction

摘要

We perform first-principles calculations to investigate the role of carbon dopants in the magnetic properties of C-doped GaN system. Our results indicate that C: GaN system is in ferromagnetic ground state and the magnetization energy is larger than some of the known room-temperature DMS, which implies the high RT ferromagnetism for C: GaN can be expected. The indirect FM interaction between two C dopants may be explained via hole induced double exchange mechanism, which plays an important role in forming the long-range ferromagnetism in C-doped GaN systems.